? semiconductor components industries, llc, 2010 january, 2010 ? rev. 9 1 publication order number: mbra160t3/d mbra160t3 surface mount schottky power rectifier sma power surface mount package this device employs the schottky barrier principle in a large area metal ? to ? silicon power diode. state of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j ? bent leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? very low forward voltage drop ? guard ? ring for stress protection ? pb ? free package is available mechanical characteristics: ? case: epoxy, molded ? weight: 70 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 12 mm tape, 5000 units per 13 inch reel ? polarity: cathode lead indicated by polarity band ? esd ratings: machine model = c human body model = 3b device package shipping ? ordering information mbra160t3 sma 5000/tape & reel schottky barrier rectifier 1.0 amperes 60 volts marking diagram sma case 403d plastic http://onsemi.com MBRA160T3G sma (pb ? free) 5000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. b16 ayww b16 = specific device code a = assembly location y = year ww = work week = pb ? free package
mbra160t3 http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v average rectified forward current (at rated v r , t c = 105 c) i o 1.0 a average rectified forward current (at rated v r , t c = 70 c) i o 2.1 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 60 a storage/operating case temperature t stg , t c ? 55 to +150 c operating junction temperature (note 1) t j ? 55 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 2) thermal resistance, junction ? to ? ambient (note 2) r jl r ja 35 86 c/w electrical characteristics maximum instantaneous forward voltage (note 3) (i f = 1.0 a) v f t j = 25 c t j = 125 c v 0.510 0.475 maximum instantaneous reverse current (v r = 60 v) i r t j = 25 c t j = 125 c ma 0.2 20 2. mounted on 2 square pc board with 1 square total pad size, pc board fr4. 3. pulse test: pulse width 250 s, duty cycle 2.0%.
mbra160t3 http://onsemi.com 3 figure 1. typical forward voltage 0.1 0.3 0.4 0.7 0.2 0.5 10 0.1 1 i f , instantaneous forward current (amps) v f , instantaneous forward voltage (volts) figure 2. maximum forward voltage 0.1 0.8 0.4 0.6 0.3 0.5 10 0.1 1 v f , instantaneous forward voltage (volts) i f , instantaneous forward current (amps) figure 3. typical reverse current 10 30 02040 1e ? 05 1e ? 04 i r , instantaneous reverse current (a) v r , reverse voltage (volts) figure 4. typical capacitance 75 c 25 c 1e ? 03 1e ? 02 125 c 75 c 25 c 10 30 70 02040 20 30 c, capacitance (pf) v r , reverse voltage (volts) 40 50 1e ? 06 0.6 0.8 125 c 60 50 50 60 60 70 80 figure 5. current derating ? junction ? to ? lead 115 125 110 120 130 0.8 t l , lead temperature ( c) figure 6. forward power dissipation 1.2 1.6 2.0 square wave dc 0.2 0.6 0 0.4 0.8 0 p fo , average power dissipation (w) i o , average forward current (amps) 0.2 0.4 140 135 155 1 1.2 0.8 1.0 i f , average forward current (a) 75 c 25 c 125 c 0.2 0.7 25 c 1.4 1.0 0.6 150 0.4 0.2 0 1.4 1.6 0.6 square wave dc 145 1.8 t j = 150 c t j = 150 c
mbra160t3 http://onsemi.com 4 package dimensions sma case 403d ? 02 issue f 4.0 0.157 2.0 0.0787 2.0 0.0787 mm inches scale 8:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. cathode (polarity band) 2. anode dim a min nom max min millimeters 1.97 2.10 2.20 0.078 inches a1 0.05 0.10 0.15 0.002 b 1.27 1.45 1.63 0.050 c 0.15 0.28 0.41 0.006 d 2.29 2.60 2.92 0.090 e 4.06 4.32 4.57 0.160 l 0.76 1.14 1.52 0.030 0.083 0.087 0.004 0.006 0.057 0.064 0.011 0.016 0.103 0.115 0.170 0.180 0.045 0.060 nom max 4.83 5.21 5.59 0.190 0.205 0.220 h e e bd l c a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 403d ? 01 obsolete, new standard is 403d ? 02. polarity indicator optional as needed (see styles) h e on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mbra160t3/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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